Delen

Growing ultra-thin materials for next-generation chips

14 november 2025

Sanne Deijkers defended her PhD thesis at the Department of Applied Physics and Science Education on November 12.

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Sanne Deijkers. Photo: Angeline Swinkels

Sanne Deijkers has developed precise methods to grow and test two-dimensional (2D) transition metal chalcogenides (TMCs), materials that could play a key role in the continued miniaturization of nanoelectronics. Her research focuses on atomic-scale processes that enable these materials to function as barriers and active layers in advanced semiconductor devices.

Why 2D materials matter for chips

Modern chips rely on multiple layers of different materials working together. As devices shrink, every layer must become thinner without losing functionality, a major challenge for conventional materials. Unlike most 3D materials, 2D TMCs retain their properties even when reduced to a single atomic layer, making them ideal candidates for ultra-thin chip components.

Deijkers investigated how to grow high-quality layers of TMCs such as TaSâ‚“ and MoSâ‚‚, using techniques like atomic layer deposition (ALD) and metalorganic chemical vapor deposition (MOCVD). These methods allow precise control over thickness and crystallinity, critical factors for reliable chip performance.

Atomic-scale growth and control

For TaSâ‚“, Deijkers developed an ALD process that enables tuning between amorphous and nanocrystalline phases by adjusting plasma composition. For MoSâ‚‚, she demonstrated conformal growth in complex 3D chip structures, ensuring uniform coverage even on sharp corners and trenches.

She also explored MOCVD growth of MoS₂ using an alternative sulfur precursor, identifying an optimal temperature range (600–700 °C) for producing large, high-quality crystals without unwanted metal deposition.

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Sanne Deijkers thesis cover

Blocking copper diffusion in interconnects

One key application of 2D TMCs is as copper diffusion barriers in chip interconnects. Copper is widely used for signal transmission, but if it spreads uncontrollably, it can cause short circuits. Deijkers showed that ALD-grown MoS₂ effectively blocks copper diffusion, provided the layer is thick enough (≥2.2 nm) and crystalline. Similar tests were performed with WS₂ and TaSₓ, confirming the importance of crystallinity for barrier performance.

Toward reliable nanoelectronics

By establishing and testing atomic-scale deposition and etching processes for TMCs, Deijkers’ work brings the semiconductor industry closer to integrating these materials into future chips. Her findings offer a roadmap for scalable, high-quality growth of 2D materials, supporting faster, smaller, and more energy-efficient electronics.

  • Dissertation title

    Processing of transition metal chalcogenides for nanoelectronic applications

  • Supervisors

    Adrie Mackus and Erwin Kessels

Media contact

Lotte Walrecht
(Communications Adviser)